4GB 1600MHz DDR3L Non-ECC CL11 SODIMM 1.35V
Internal memory
4 GB
Internal memory type
DDR3
Memory clock speed
1600 MHz
Component for
Notebook
ECC
No
Memory form factor
204-pin SO-DIMM
Memory layout (modules x size)
1 x 4 GB
CAS latency
CL11
Memory voltage
1.35; 1.5 V
Registered
No
Memory bus
64 bit
Lead plating
Gold
Module configuration
512M X 64
Memory
Row cycle time
48.125 ns
Refresh row cycle time
260 ns
Row active time
35 ns
Operational conditions
Operating temperature (T-T)
0 - 85
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